M91 FastHall materials and measurement applications


Solar cells

OPVs, a:Si, µc-Si, CdTe, CuInGaSe (CIGS)

Organic electronics

OTFTs, Pentacene, Chalcogenides, OLEDs

Transparent conducting oxides

InSnO (ITO), ZnO, GaZnO, InGaZnO (IGZO)

III-V semiconductors

InP, InSb, InAs, GaN, GaP, GaSb, AIN based devices, high electron mobility transistors (HEMTs) and heterojunction bipolar transistors

II-VI semiconductors

CdS, CdSe, ZnS, ZnSe, ZnTe, HgCdTe

Elemental semiconductors

Ge, Si on insulator devices (SOI), SiC, doped diamond SiGe based devices: HBTs and FETs

Dilute magnetic semiconductors

GaMnAs, MnZnO

Half-Heusler compounds

TiNiSn, ZrNiSn, GdPtBi

Topological semi-metals

TaAs, WTe2, MoTe2

Topological insulators

Bi2Te3, Bi2Se3, Sb2Te3

Transition-metal Di-chalcogenides (TMDC)

WS2, WSe2, MoS2, HfS2

Other 2D materials

BN, graphene structures

Other conducting materials

Metal oxides
Organic and inorganic conductors

High temperature superconductors

Measurement applications

Hall voltage

  • Resolution = 1 µV
  • Noise = 0.1 µV (RMS), averaged over 1 power line cycle

Resistance/resistivity (four-contact in-line probe and van der Pauw)

  • Calculated by instrument
  • Resistance range 100 µΩ to 10 MΩ standard
  • Up to 200 GΩ with high-resistance option


  • System provides field control to measure resistance as a function of magnetic field are saved to file

Hall coefficient

  • Calculated by instrument
  • Derived from Hall voltage, magnetic field, and current

Hall mobility

  • Calculated by instrument
  • 10-3 to 106 cm2/V s

Anomalous Hall effect (AHE)

  • System provides field control to measure Hall voltage as a function of magnetic field

Carrier type/concentration/density

  • Sheet or volume carrier concentration calculated
  • Sheet carrier density ≤1017 cm-2 (carrier density depends on measurement parameters)


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