BEYOND THE SMU.

When materials become devices, the M81-SSM and SMU‑10 are ready — world-class DC precision with the AC and lock-in capabilities next-generation devices demand.

KEY CAPABILITIES FOR DEVICE RESEARCH:

	DC accuracy on par with the world's best DC-only SMU
	10 to 100× lower source noise than typical DC SMUs
	AC sourcing and measurement to 100 kHz
	Lock-in detection for signals buried in noise
	Voltage or current-controlled I-V characterization from DC to 100 kHz
	Up to 3 synchronized SMU-10 modules for correlated device measurements

The path from materials research to device development is a critical transition. Where materials researchers need lock-in sensitivity and synchronized multi-parameter measurements, device engineers need something different: the familiar source-measure workflow of the SMU, with the precision to characterize devices at nanometer scales.

Traditional SMUs excel at DC source-measure. But as devices shrink to atomically thin dimensions, DC-only instruments reach their limits. Ultra-low leakage currents, weak AC signals buried in noise, frequency-dependent behaviors — these demand capabilities that conventional SMUs simply weren't designed to provide.

The SMU-10 module for the M81-SSM was designed specifically for this transition. It delivers world-class DC accuracy on par with the best DC-only SMUs — then goes further, adding AC sourcing to 100 kHz and lock-in sensitivity for signals buried deep in noise. All in the familiar four-quadrant SMU format device engineers already know.

The same M81 integration advantage that makes it the ideal materials research platform makes it equally powerful for device characterization: synchronized measurements, unified noise architecture, and a signal path designed and optimized for low-level measurements.