Lake Shore Cryotronics will be discussing its industry-leading cryogenic probing and material characterization platforms at the MRS Spring Meeting & Exhibit, April 6 – 10, in San Francisco.
Lake Shore’s micro-manipulated probe stations enable reliable measurements of electrical, electro-optical, DC, RF, and microwave properties of materials and devices at cryogenic temperatures and under the application of high magnetic field – capabilities often vital to nanoscale, semiconductor, and spintronic device R&D. The high-vacuum stations are for the earliest phases of development when it is often necessary to measure smaller and fewer samples at temperatures below 10 K and in fields to over 2 T.
For visitors wanting to see a cryogenic probe station up close, the company will have its Model TTPX set up in MRS Booth 300 during the exhibit.
Lake Shore will also be answering questions about its new Model 8425 for researchers who require Hall measurement of wafer-scale materials in a controlled cryogenic environment. It enables Hall mobility measurements on wafers up to 51 mm in diameter without needing to dice fabricated wafers, as typically required in a Hall system. Multiple structures can be sampled on a wafer, including structures progressively built on substrates, and because the system keeps samples under vacuum, it is ideal for materials that are reactive to air or require initial warming to drive out moisture.
Also at MRS Spring, Lake Shore will discuss:
- Other Hall effect systems, including its 8400 Series HMS with an AC field Hall measurement option for characterizing materials with very low mobilities down to 0.001 cm2/V s.
- The fully integrated Model 8501 THz system for non-contact characterization of research-scale materials, which features a high-field cryostat, enabling measurement of material spectroscopic responses across a wide range of frequencies, temperatures, and field strengths.
- Magnetometer systems (VSM/AGMs) for characterizing magnetic properties of solid, thin film, powder, and liquid samples over a 4.2 K to 1273 K temperature range and variable fields to >3 T.
- Its efforts toward developing a THz-frequency, on-wafer contact probing solution for high-speed device measurements as a function of cryogenic temperatures and magnetic fields.
For more information, visit MRS Booth 300.