DT-670 Silicon Diodes - Technical Specifications

Home > Products > Cryogenic Temperature Sensors > Silicon Diodes > DT-670

DT-670 Silicon Diodes

Specifications

Standard curve Curve DT-670

Recommended excitation 10 µA ±0.1%

Max reverse voltage 60 V

Max current before damage 1 mA continuous or 100 mA pulsed

Dissipation at recommended excitation 16 µW at 4.2 K; 10 µW at 77 K; 5 µW at 300 K

Thermal response time SD: typical <10 ms at 4.2 K, 100 ms at 77 K, 200 ms at 305 K;
BR: 1 ms at 4.2 K, 13 ms at 77 K, 20 ms at 305 K

Use in radiation
Recommended for use only in low level radiation – for more information click here

Use in magnetic field
Not recommended for use in magnetic field applications below 60 K. Low magnetic field dependence when used in fields up to 5 tesla above 60 K – for more information click here.

Reproducibility¹ ±10 mK at 4.2 K

¹ Short-term reproducibility data is obtained by subjecting sensor to repeated thermal shocks from 305 K to 4.2 K

Range of Use

	Minimum Limit	Maximum Limit
DT-670-SD	1.4 K	500 K
DT-670E-BR	1.4 K	500 K

Calibrated Accuracy

	Typical sensor accuracy²	Long-term stability³
1.4 K	±12 mK	—
4.2 K	±12 mK	10 mK
10 K	±12 mK	—
77 K	±22 mK	40 mk
300 K	±32 mK	25 mk
500 K	±50 mK	——

² [(Calibration uncertainty)² + (reproducibility)²] ^0.5 for more information see Appendices B, D, and E
³ Long-term stability data is obtained by subjecting sensor to 200 thermal shocks from 305 K to 77 K

Standard Curve DT-670
Tolerance Bands

	2 K to 100 K	100 K to 305 K	305 K to 500 K
Band A	±0.25 K	±0.5 K	±0.5 K
Band A1	±0.25 K	±1.5% of temp	±1.5% of temp
Band B	±0.5 K	±0.5 K	±0.33% of temp
Band B1	±0.5 K	±1.5% of temp	±1.5% of temp
Band C	±1 K	±1 K	±0.50% of temp

	30 K to 100 K	100 K to 305 K	305 K to 500 K
Band D⁴	±0.25 K	±0.30 K	±0.10% of temp
Band E⁴	±0.25 K	±0.25% of temp	±0.25% of temp
⁴ For T < 30 K ±1.5 K

Temperature Response Data Table

	DT-670
	V (volts)	dV/dT (mV/K)
1.4 K	1.64	-12.5
4.2 K	1.58	-31.6
10 K	1.38	-26.8
77 K	1.03	-1.73
305 K	0.560	-2.30
Click here for expanded response table

Physical Specifications
	Mass	Lead type	Lead polarity	Sensor materials used
DT-670-SD	37 mg	2 – nickel and gold plated Kovar	Positive lead on right with package lip up and leads towards user	Sapphire base with alumina body & lid. Molybdenum/manganese metallization on base and lid top with nickel and gold plating. Gold tin solder as hermetic seal
DT-670E-BR (bare die)	72.7 µg	none	Positive connection made through bottom of chip; negative connection made on base pad on top of chip	Silicon chip with aluminum metallization on chip contacts

Typical Magnetic Field-Dependent Temperature Errors⁵ ΔT/T (%) at B (magnetic induction)

Package Base Parallel to Field B
T(K)	1 T	2 T	3 T	4 T	5 T
4.2	-200	-300	-350	-400	-500
20	-10	-20	-25	-30	-40
40	-4	-6	-8	-10	-12
60	-0.5	-1	-2	-3	-3.5
80	< 0.1	-0.5	-0.8	-1.1	-1.5
300	< -0.1	< -0.1	< -0.1	< -0.1	< -0.1

Package Base Perpendicular to Field B
T(K)	1 T	2 T	3 T	4 T	5 T
4.2	-8	-9	-11	-15	-20
20	-4	-5	-5	-5	-10
40	-1.5	-3	-4	-5	-5.5
60	-0.5	-0.7	-0.8	-1	-1.1
80	-0.1	-0.3	-0.5	-0.6	-0.7
300	< 0.1	0.2	0.5	0.6	0.6
⁵ To minimize magnetic field-induced temperature errors, the sensor should be oriented so that the package base is perpendicular to the magnetic field flux lines - this results in the diode current being parallel to the magnetic field

DT-670 Temperature Response Curve	Curve DT-670 Tolerance Bands

DT-670 Series Expanded Temperature Response Data Table

T (K)	Voltage (V)	dV/dT (mV/K)
1.4	1.644290	-12.5
1.5	1.642990	-13.6
1.6	1.641570	-14.8
1.7	1.640030	-16.0
1.8	1.638370	-17.1
1.9	1.636600	-18.3
2.0	1.634720	-19.3
2.1	1.632740	-20.3
2.2	1.630670	-21.1
2.3	1.628520	-21.9
2.4	1.626290	-22.6
2.5	1.624000	-23.2
2.6	1.621660	-23.6
2.7	1.619280	-24.0
2.8	1.616870	-24.2
2.9	1.614450	-24.4
3.0	1.612000	-24.7
3.1	1.609510	-25.1
3.2	1.606970	-25.6
3.3	1.604380	-26.2
3.4	1.601730	-26.8
3.5	1.599020	-27.4
3.6	1.596260	-27.9
3.7	1.59344	-28.4
3.8	1.59057	-29.0
3.9	1.58764	-29.6
4.0	1.58465	-30.2
4.2	1.57848	-31.6
4.4	1.57202	-32.9
4.6	1.56533	-34.0
4.8	1.55845	-34.7
5.0	1.55145	-35.2
5.2	1.54436	-35.6
5.4	1.53721	-35.9
5.6	1.53000	-36.2
5.8	1.52273	-36.5

T (K)	Voltage (V)	dV/dT (mV/K)
6.0	1.51541	-36.7
6.5	1.49698	-36.9
7.0	1.47868	-36.2
7.5	1.46086	-35.0
8.0	1.44374	-33.4
8.5	1.42747	-31.7
9.0	1.41207	-29.9
9.5	1.39751	-28.3
10.0	1.38373	-26.8
10.5	1.37065	-25.5
11.0	1.35820	-24.3
11.5	1.34632	-23.2
12.0	1.33499	-22.1
12.5	1.32416	-21.2
13.0	1.31381	-20.3
13.5	1.30390	-19.4
14.0	1.29439	-18.6
14.5	1.28526	-17.9
15.0	1.27645	-17.3
15.5	1.26794	-16.8
16.0	1.25967	-16.3
16.5	1.25161	-15.9
17.0	1.24372	-15.6
17.5	1.23596	-15.4
18.0	1.22830	-15.3
18.5	1.22070	-15.2
19.0	1.21311	-15.2
19.5	1.20548	-15.3
20.0	1.197748	-15.6
21.0	1.181548	-17.0
22.0	1.162797	-21.1
23.0	1.140817	-20.8
24.0	1.125923	-9.42
25.0	1.119448	-4.60
26.0	1.115658	-3.19
27.0	1.112810	-2.58

T (K)	Voltage (V)	dV/dT (mV/K)
28.0	1.110421	-2.25
29.0	1.108261	-2.08
30.0	1.106244	-1.96
31.0	1.104324	-1.88
32.0	1.102476	-1.82
33.0	1.100681	-1.77
34.0	1.098930	-1.73
35.0	1.097216	-1.70
36.0	1.095534	-1.69
37.0	1.093878	-1.64
38.0	1.092244	-1.62
39.0	1.090627	-1.61
40.0	1.089024	-1.60
42.0	1.085842	-1.59
44.0	1.082669	-1.59
46.0	1.079492	-1.59
48.0	1.076303	-1.60
50.0	1.073099	-1.61
52.0	1.069881	-1.61
54.0	1.066650	-1.62
56.0	1.063403	-1.63
58.0	1.060141	-1.64
60.0	1.056862	-1.64
65.0	1.048584	-1.67
70.0	1.040183	-1.69
75.0	1.031651	-1.72
77.35	1.027594	-1.73
80.0	1.022984	-1.75
85.0	1.014181	-1.77
90.0	1.005244	-1.80
100.0	0.986974	-1.85
110.0	0.968209	-1.90
120.0	0.949000	-1.94
130.0	0.929390	-1.98
140.0	0.909416	-2.01
150.0	0.889114	-2.05

T (K)	Voltage (V)	dV/dT (mV/K)
160.0	0.868518	-2.07
170.0	0.847659	-2.10
180.0	0.826560	-2.12
190.0	0.805242	-2.14
200.0	0.783720	-2.16
210.0	0.762007	-2.18
220.0	0.740115	-2.20
230.0	0.718054	-2.21
240.0	0.695834	-2.23
250.0	0.673462	-2.24
260.0	0.650949	-2.26
270.0